PART |
Description |
Maker |
FS300R17KE3 |
EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
|
eupec GmbH
|
FS225R12KE4 |
EconoPACK B-series module with trench/fieldstop IGBT4 and optimized EmCon diode
|
Infineon Technologies AG
|
FS225R17KE4 |
EconoPACK? Modul mit Trench/Feldstop IGBT4 und Emitter Controlled3 Diode
|
Infineon Technologies AG
|
FS150R12PT4 |
EconoPACK?? Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACK? Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC
|
Infineon Technologies AG
|
FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology 1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
FDB045AN08A0 FDB045AN08NBSP FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?/a> N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm From old datasheet system N-Channel UltraFET® Trench MOSFET N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT NPT Trench Technology, Positive temperature coefficient Extremely enhanced avalanche capability
|
Fairchild Semiconductor List of Unclassifed Manufacturers
|
NX2301P |
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., L...
|
IRF7328PBF IRF7328PBF10 IRF7328TRPBF IRF7328PBF-15 |
Trench Technology Trench Technology Ultra Low On-Resistance
|
International Rectifier
|
CM50TJ-24F |
128 x 64 pixel format, LED or EL Backlight available Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts 128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
FGH50T65UPD |
650V, 50A, Field Stop Trench IGBT 650 V, 50 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|